I was searching through the world wide web but couldn't obtain any facts describe how small threshold voltage is rapidly but take in far more energy And exactly how higher threshold voltage is sluggish but consumes low electricity.
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It is possible to modify the pointed out parameters, and Examine it having a "good" final result which usually takes two hours siumlation time. Based on your criteria, you are able to accelerate the simulation time.
So can someone be sure to reveal how FET with minimal threshold voltage has greater velocity and higher leakage present-day even though FET with higher threshold will be sluggish but reduced on ability?
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The situation is for my investigate I need to do things like sweep voltage, frequency, load resistance and so on. to analyse their effect on the output
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T How to make the sub energy domain and major ability area working with similar vss vdd Started off by themanh246